High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure

Changhyun Ko; Shandalov, Michael; McIntyre, Paul C.; Ramanathan, Shriram
August 2010
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p082102
Academic Journal
Point defect equilibration in nanocrystalline hafnium oxide thin films in the monoclinic (m-HfO2) phase was studied by electrochemical measurements performed under varying temperature and oxygen partial pressure (PO2) on films of 35–63 nm thickness on single crystal MgO and Al2O3 substrates. The conductance varied as (PO2)n, where n is the in the range ∼+1/11 to ∼+1/14, at high PO2. The increasing conductance with PO2 suggests that the electronic conduction in the HfO2 films is p-type and oxygen interstitials or hafnium vacancies, rather than oxygen vacancies, could be dominant charged point defects in nanocrystalline, undoped m-HfO2 films.


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