TITLE

Device characteristics of short-channel polymer field-effect transistors

AUTHOR(S)
Hirose, Takeshi; Nagase, Takashi; Kobayashi, Takashi; Ueda, Rieko; Otomo, Akira; Naito, Hiroyoshi
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p083301
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of channel materials on the electrical characteristics of organic field-effect transistors (OFETs) with short-channel lengths ranging from 1 μm to 30 nm is investigated using polymer semiconductors. The current-voltage characteristics of short-channel OFETs strongly depend on the electrode/organic semiconductor contacts, and the parabolic output current due to space-charge limited current can be reduced by increasing the ionization potential of organic semiconductors. Transistor operations with a high on/off ratio over 103 are achieved in OFETs with 30 nm length channels.
ACCESSION #
53421593

 

Related Articles

  • Electrical characterization of Fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces. Agrawal, Ruchi; Ghosh, Subhasis // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222114 

    Systematic studies of current injection from different metal electrodes to metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been carried out. It has been observed that the barrier for carrier injection cannot be explained by simple vacuum alignment scheme. Moreover,...

  • High contrast organic light-emitting devices with improved electrical characteristics. Zhou, Y. C.; Ma, L. L.; Zhou, J.; Gao, X. D.; Wu, H. R.; Ding, X. M.; Hou, X. Y. // Applied Physics Letters;6/5/2006, Vol. 88 Issue 23, p233505 

    High contrast organic light-emitting devices with low-reflection cathodes are fabricated. The cathode consists of a semitransparent metal layer, a phase-changing (PC) layer, and a reflective metal layer. With Al doped tris(8-hydroxyquinoline) aluminum as PC layer, devices exhibit the average...

  • Emission through one of two metal electrodes of an organic light-emitting diode via surface-plasmon cross coupling. Gifford, Dawn K.; Hall, Dennis G. // Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4315 

    We report strong surface emission from an organic light-emitting diode in which the luminescent material resides between two nearly opaque metal electrodes. Experimental and theoretical analyses indicate that cross coupling between surface plasmons on opposite sides of the metal cathode layer...

  • Mechanisms of injection enhancement in organic light-emitting diodes through an Al/LiF electrode. Heil, H.; Steiger, J.; Karg, S.; Gastel, M.; Ortner, H.; von Seggern, H.; Sto¨ßel, M. // Journal of Applied Physics;1/1/2001, Vol. 89 Issue 1, p420 

    The mechanisms of enhanced electron injection into the electron transport layer of Alq[sub 3] [tris(8-hydroxyquinoline)-aluminum] via LiF interlayers are studied by means of I-V characteristics, secondary ion mass spectroscopy (SIMS), and Kelvin probe measurements. Devices for single carrier...

  • Influence of traps on avalanche triggering during breakdown of gallium phosphide p—n junctions. Bulyarskiı, S. V.; Serezhkin, Yu. N.; Ionychev, V. K. // Technical Physics Letters;Mar99, Vol. 25 Issue 3, p170 

    Deep centers are found to strongly influence the statistical delay of microplasma breakdown in gallium phosphide red LEDs. It is postulated that this effect is caused by Shockley electrons triggering an avalanche or by subthreshold mechanisms of impact ionization. It is shown that the...

  • Synthesis, photophysical and electrochemical properties of 2,8-diaryl-dibenzothiophene derivatives for organic electronics. Nayak, Pabitra; Agarwal, Neeraj; Periasamy, N. // Journal of Chemical Sciences;Mar2010, Vol. 122 Issue 2, p119 

    A series of 2,8- p-diaryldibenzothiophene derivatives were synthesized and characterized. These molecules have electron withdrawing or electron donating groups at the para phenyl position, which alters the electronic properties of these derivatives. The quantum yield, fluorescence lifetime,...

  • Three-dimensional organic field-effect transistors: Charge accumulation in the vertical semiconductor channels. Uno, Mayumi; Tominari, Y.; Takeya, J. // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p173301 

    A three-dimensional organic field-effect transistor is developed to accumulate charge in its vertical semiconductor channel so that space availability for the field-induced carriers is essentially multiplied. A multicolumnar structure is built incorporating a vertical layer of soluble...

  • In situ measurement of the internal luminescence quantum efficiency in organic light-emitting diodes. Flämmich, Michael; Gather, Malte C.; Danz, Norbert; Michaelis, Dirk; Meerholz, Klaus // Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p263306 

    The internal luminescence quantum efficiency q is one limiting factor for the performance of organic light-emitting diodes. Photoluminescence measurements are frequently used to estimate q but these neglect effects of the local environment of the emissive sites and the electrical excitation...

  • Photo-Fries-based photosensitive polymeric interlayers for patterned organic devices. Montaigne Ramil, Alberto; Hernandez-Sosa, Gerardo; Griesser, Thomas; Simbrunner, Clemens; Höfler, Thomas; Trimmel, Gregor; Kern, Wolfgang; Shen, Quan; Teichert, Christian; Schwabegger, Günther; Sitter, Helmut; Sariciftci, Niyazi // Applied Physics A: Materials Science & Processing;Jun2012, Vol. 107 Issue 4, p985 

    This work reports on the investigation of the photosensitive polymer poly(diphenyl bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylate) (PPNB), which undergoes the photo-Fries rearrangement upon illumination with UV-light, used as interfacial layers in organic electronic devices. Two cases were...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics