TITLE

White light emission from amorphous silicon oxycarbide (a-SiCxOy) thin films: Role of composition and postdeposition annealing

AUTHOR(S)
Gallis, Spyros; Nikas, Vasileios; Suhag, Himani; Mengbing Huang; Kaloyeros, Alain E.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p081905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of carbon and postdeposition annealing on white luminescence are studied in amorphous silicon oxycarbide (a-SiCxOy) films grown by chemical vapor deposition. The films showed strong room-temperature luminescence in a broad spectral range from blue-violet to near infrared, depending on excitation energy. Photoluminescence (PL) intensity exhibited good correlation with Si[Single_Bond]O[Single_Bond]C bond concentration. At low C (<5%), matrix PL was completely quenched after annealing in O2 even at 500 °C. PL was unaffected by O2 annealing at higher C, and could be enhanced when excited by an ultraviolet laser. These findings are correlated to C- and Si-related O defect centers as luminescence sources in a-SiCxOy.
ACCESSION #
53421581

 

Related Articles

  • Visible photo- and electroluminescence from electrochemically formed nanocrystalline Si thin film. Toyama, Toshihiko; Matsui, Tetsuyuki; Kurokawa, Yasuhito; Okamoto, Hiroaki; Hamakawa, Yoshihiro // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1261 

    Visible photo- (PL) and electroluminescence (EL) were observed at room temperature from nanocrystalline Si (nc-Si) thin film; nc-Si was electrochemically formed in HF aqueous solution from boron doped microcrystalline Si (μc-Si) deposited by a rf plasma chemical vapor deposition method on a...

  • Visible light emission from thin films containing Si, O, N, and H. Augustine, B. H.; Irene, E. A.; He, Y. J.; Price, K. J.; McNeil, L. E.; Christensen, K. N.; Maher, D. M. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p4020 

    Examines the fabrication, chemical, optical and photoluminescence characterization of amorphous silicon-rich oxynitride thin films by plasma-enhance chemical-vapor deposition. Experimental conditions; Characterization of film materials; Conclusions.

  • Strong blue photoluminescence from as-fabricated amorphous-Si:H/SiO2 multilayers. Zhongyuan Ma; Kunji Chen; Xinfan Huang; Jun Xu; Wei Li; Da Zhu; Jiaxin Mei; Feng Qiao; Duan Feng // Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p516 

    Amorphous-Si:H/SiO2 multilayers were layer-by-layer deposited and in situ plasma oxidized by a plasma-enhanced chemical vapor deposition system. Blue photoluminescence at room temperature was observed from as-fabricated samples without annealing. By controlling the thickness of the...

  • a-Si/SiN multilayered light absorber for solar cell. Panchal, A.; Rai, D.; Mathew, Meril; Solanki, C. // Journal of Nanoparticle Research;Jun2011, Vol. 13 Issue 6, p2469 

    40 alternate a-Si/SiN multilayer are incorporated as an absorber layer in a p-i-n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which...

  • New deep acceptor in epitaxial cubic SiC. Freitas, J. A.; Bishop, S. G. // Applied Physics Letters;12/25/1989, Vol. 55 Issue 26, p2757 

    We have investigated the temperature and excitation intensity dependence of photoluminescence (PL) spectra in several undoped and lightly Al-doped thin films of cubic SiC grown by chemical vapor deposition on Si substrates. The low-power PL spectra in all samples studied exhibit a deep...

  • Photoluminescence vibrational structure of Si center in chemical-vapor deposited diamond. Gorokhovsky, A.A.; Turukhin, A.V. // Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p43 

    Examines a photoluminescence spectra from the silicon (Si) impurity center in diamond films grown by chemical vapor deposition techniques. Observation of vibrational structure of the Si center; Measurement of the temperature dependencies of linewidth of the zero phonon line and phonon replica;...

  • The Charge Storage Characteristics of Si-QDs Embedded in Silicon Nitride Films (abstract). Seunghun Jang; Changhun Ko; Kiyoung Jeong; Moonsup Han // AIP Conference Proceedings;4/19/2009, Vol. 1119 Issue 1, p219 

    Silicon quantum dots (Si-QDs) are being increasingly considered for memory applications. We investigated the effect of annealing on capacitance-voltage (C-V) characteristics of Si-QDs embedded in silicon nitride films. The Si-QDs dispersed in silicon nitride films were formed by plasma-enhanced...

  • Optical and structural properties of polycrystalline 3C-SiC films. Haddad-Adel, A.; Inokuma, T.; Kurata, Y.; Hasegawa, S. // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p181904 

    In this letter, polycrystalline 3C-SiC (111) films were deposited by plasma enhanced chemical vapor deposition system at a temperature of 670 °C using a gas mixture of SiH4/CH4/H2/(CF4). The optical properties of deposited films with different feed gases and different structures were...

  • Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si. Choyke, W. J.; Feng, Z. C.; Powell, J. A. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3163 

    Presents a study which observed the photoluminescence of silicon-carbon films grown on silicon by way of chemical vapor deposition. Theory of the study; Details on the experiment; Results of the study.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics