White light emission from amorphous silicon oxycarbide (a-SiCxOy) thin films: Role of composition and postdeposition annealing

Gallis, Spyros; Nikas, Vasileios; Suhag, Himani; Mengbing Huang; Kaloyeros, Alain E.
August 2010
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p081905
Academic Journal
The effects of carbon and postdeposition annealing on white luminescence are studied in amorphous silicon oxycarbide (a-SiCxOy) films grown by chemical vapor deposition. The films showed strong room-temperature luminescence in a broad spectral range from blue-violet to near infrared, depending on excitation energy. Photoluminescence (PL) intensity exhibited good correlation with Si[Single_Bond]O[Single_Bond]C bond concentration. At low C (<5%), matrix PL was completely quenched after annealing in O2 even at 500 °C. PL was unaffected by O2 annealing at higher C, and could be enhanced when excited by an ultraviolet laser. These findings are correlated to C- and Si-related O defect centers as luminescence sources in a-SiCxOy.


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