A nanoscale Ti/GaAs metal-semiconductor hybrid sensor for room temperature light detection

Newaz, A. K. M.; Chang, W.-J.; Wallace, K. D.; Edge, L. C.; Wickline, S. A.; Bashir, R.; Gilbertson, A. M.; Cohen, L. F.; Solin, S. A.
August 2010
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p082105
Academic Journal
We report an individually addressable Ti/GaAs metal-semiconductor hybrid optical nanosensor with positive photoresistance and a sensitivity that increases as the device dimensions shrink. The underlying physics relates to the crossover from ballistic to diffusive transport of the photoinduced carriers and the geometric enhancement of the effect associated with a Schottky-barrier-coupled parallel metal shunt layer. For a 250 nm device under 633 nm illumination we observe a specific detectivity of D*=5.06×1011 cm [Square_Root]Hz/W with a dynamic response of 40 dB.


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