Ga2Te3 phase change material for low-power phase change memory application

Hao Zhu; Jiang Yin; Yidong Xia; Zhiguo Liu
August 2010
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p083504
Academic Journal
Ga2Te3 films show a higher crystallization temperature, wider band gap, better data retention ability (keeping the amorphous state at 112 °C for ten years), and higher room-temperature resistivity of the crystalline state as compared with Ge2Sb2Te5. Ga2Te3 phase change memory cells with an effective diameter of 1 μm also show fast switching speed. The set operation was done by a 400 ns-2.4 V pulse, and the reset operation was done by a 30 ns-5.5 V pulse. The dynamic switching ratio between the OFF and ON states is over than 103.


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