TITLE

High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors

AUTHOR(S)
Po-Tsun Liu; Yi-Teh Chou; Li-Feng Teng; Chur-Shyang Fuh
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p083505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm2/V s and hole mobility of 0.15 cm2/V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications.
ACCESSION #
53421559

 

Related Articles

  • NEGATIVE DIFFERENTIAL RESISTANCE BEHAVIOR IN DELTA-DOPED AlInP STRUCTURE GROWN BY MOCVD. Yarn, K.F. // Active & Passive Electronic Components;Sep2002, Vol. 25 Issue 3, p245 

    An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of l?kA/cm 2 were achieved at room temperature. In addition, the maximum...

  • Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition. Kong, H. S.; Palmour, J. W.; Glass, J. T.; Davis, R. F. // Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p442 

    Metal-semiconductor field-effect transistors (MESFET’s) have been fabricated in an unintentionally doped, n-type β-SiC thin film grown by chemical vapor deposition (CVD). This n-type layer was deposited on a monocrystalline p-type β-SiC (100) CVD layer previously grown on a p-type...

  • Characteristics of polycrystalline silicon Schottky barrier thin film transistors fabricated using metallic junction source/drain with erbium silicide and platinum silicide. Jin-Wook Shin; Won-Ju Cho; Chel-Jong Choi; Moongyu Jang // Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG 

    Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFTs) were fabricated using platinum and erbium silicided source/drain for p- and n-channel SB-TFTs, respectively. High quality poly-Si films were obtained by crystallizing the amorphous Si films with the excimer laser...

  • Dependence of GaAs-AlxGa1-xAs heterostructures on Al composition for metal-semiconductor field-effect transistor operation. Hiruma, Kenji; Mori, Mitsuhiro; Kakibayashi, Hiroji; Ihara, Ayako; Takahashi, Susumu; Yanokura, Eiji // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1439 

    Presents information on a study which analyzed the growth of high-quality gallium arsenide-Al[subx]Ga[sub1-x]As heterostructures for metal-semiconductor field-effect transistor (MESFET) applications by metalorganic vapor-phase epitaxy. Description of the MESFET structure; Device fabrication and...

  • Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates. Yu, L. S.; Qiao, D. J.; Xing, Q. J.; Lau, S. S.; Boutros, K. S.; Redwing, J. M. // Applied Physics Letters;7/13/1998, Vol. 73 Issue 2 

    The electrical characteristics of Ni and Ti Schottky barriers on n-Al[sub 0.15]Ga[sub 0.85]N on SiC were investigated. We report that the barrier height for Ni on n-Al[sub 0.15]Ga[sub 0.85]N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3–0.4 eV larger...

  • Ab initio calculation of band alignment of epitaxial La2O3 on Si(111) substrate. Debernardi, Alberto // AIMS Materials Science;2015, Vol. 2 Issue 3, p279 

    By means of plane wave pseudopotential method we have studied the electronic properties of the heterostructure formed by an high dielectric constant oxide, the hexagonal La2O3 epitaxially grown with (0001)-orientation on Si (111) substrate. We found that for La2O3 both the dielectric constant...

  • 16MBIT SRAM CUTS SIZE IN HALF.  // Electronics Weekly;9/17/2003, Issue 2115, p27 

    Renesas Technology Corp. has a range of low power 16 Mbit SRAM with a chip size of approximately 32mm2. The small die size is achieved through combining an SRAM cell using a thin film transistor and a DRAM cell using a stacked capacitor. Dubbed Super SRAM, the memory cell is approximately half...

  • Logic Gates and Ring Oscillators Based on Ambipolar Nanocrystalline-Silicon TFTs. Subramaniam, Anand; Cantley, Kurtis D.; Vogel, Eric M. // Active & Passive Electronic Components;2013, p1 

    Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) are well suited for circuit applications that require moderate device performance and low-temperature CMOS-compatible processing below 250°C. Basic logic gate circuits fabricated using ambipolar nc-Si TFTs alone are presented and...

  • Characteristics Research of Hall Magnetic Sensor based on nano-polysilicon Thin Film Transistors. Cuicui Zhuang; Xiaofeng Zhao; Yu Song; Dianzhong Wen; Jiandong Jin; Yang Yu // Key Engineering Materials;2014, Vol. 609-610, p1082 

    In this paper, we presented Hall magnetic sensors based on nano-polysilcon thin film transistors (TFTs). These sensors are fabricated on the <100> orientation high resistivity silicon substrates by using complementary metal oxide semiconductor (CMOS) technology and adopting the nano-polysilicon...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics