Electron spin relaxation time in GaAs/AlGaAs multiple quantum wells grown on slightly misoriented GaAs(110) substrates

Shinji Koh; Nakanishi, Akira; Kawaguchi, Hitoshi
August 2010
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p081111
Academic Journal
We measured the electron spin relaxation times τs in GaAs/AlGaAs multiple quantum wells (MQWs) grown on slightly misoriented GaAs(110) substrates. The τs of the MQW on misoriented GaAs(110) decreased when the misorientation angles were increased. The bulk inversion asymmetry component of the D’yakonov–Perel’ spin relaxation in the misoriented (110) MQWs was calculated to verify the origin of the decrease in the τs. A comparison between the experimental and calculated results revealed that the decrease in the τs was attributed to the emergence of in-plane effective magnetic fields in the (110) MQWs due to the misorientation.


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