Optical spectroscopy of cubic GaN in nanowires

Renard, J.; Tourbot, G.; Sam-Giao, D.; Bougerol, C.; Daudin, B.; Gayral, B.
August 2010
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p081910
Academic Journal
We show that highly homogeneous cubic GaN can be grown by plasma-assisted molecular beam epitaxy on wurtzite GaN nanowires. The line width of the donor bound exciton is below 3 meV and can reach 1.6 meV in the best parts of the studied sample. This allows to perform a detailed spectroscopy of cubic GaN, and, in particular, to determine the precise spectral positions of the donor bound exciton, the fundamental free exciton and the split-off exciton in a photoluminescence experiment.


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