Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Ahn, Jaehui; Mastro, Michael A.; Hite, Jennifer; Eddy, Charles R.; Kim, Jihyun
August 2010
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p082111
Academic Journal
Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7–5.5 V.


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