TITLE

The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

AUTHOR(S)
Chun, B. S.; Wu, H. C.; Abid, M.; Chu, I. C.; Serrano-Guisan, S.; Shvets, I. V.; Choi, Daniel. S.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p082109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p–Zn 3d coupling and the modification of the Zn 4s–O 2p interaction in ZnO induced by Al doping.
ACCESSION #
53421535

 

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