TITLE

A dual-wavelength indium gallium nitride quantum well light emitting diode

AUTHOR(S)
Ozden, I.; Makarona, E.; Nurmikko, A. V.; Takeuchi, T.; Krames, M.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2532
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p[sup ++]/n[sup ++] InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale. © 2001 American Institute of Physics.
ACCESSION #
5319227

 

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