Nitrogen-ion-implantation synthesis of wurtzite GaN in GaP

Kuriyama, K.; Kondo, H.; Hayashi, N.; Ogura, M.; Hasegawa, M.; Kobayashi, N.; Takahashi, Yukimi; Watanabe, S.
October 2001
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2546
Academic Journal
α-GaN phase (wurtzite) was synthesized in GaP(100) by 140-keV N[sub 2][sup +] ion implantation with a dose of 3.0×10[sup 17] cm[sup -2] at 400 °C and subsequent furnace annealing at 950 °C for 20 min or rapid thermal annealing at 1000 °C for 15 s. The traces of α-GaN were recognized by glancing-angle x-ray diffraction, supporting by the observation of the planes belonging to the [0100]-zone axis in α-GaN by a selected-area electron diffraction analysis. The formation of microcrystalline GaN of <1000 Å in size was confirmed by using Auger electron spectroscopy and cross sectional transmission electron microscopy. A[sub 1] transverse optical phonon mode in α-GaN was observed at around 525 cm[sup -1], indicating a nearly orientation relationship with GaN[112¯0]//GaP[100]. © 2001 American Institute of Physics.


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