TITLE

Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization

AUTHOR(S)
Nam, Ki Tae; Datta, Arindom; Kim, Soo-Hyun; Kim, Ki-Bum
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2549
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A laterally segregated diffusion barrier was investigated for Cu metallization. In this scheme, the intended final structure is composed of two different barrier materials; one is the parent barrier layer (TiN, in our case) and the other (Al[sub 2]O[sub 3], in this case) is segregated laterally along the grain boundaries of the parent barrier layer. As a result, the fast diffusion paths, the so-called grain boundaries of the parent diffusion barrier, are effectively passivated. To realize this type of barrier experimentally, the TiN(5 nm)/Al(2 nm)/TiN(5 nm) structure was fabricated by sequential sputtering and compared with TiN(10 nm) as a diffusion barrier against Cu. The etch pit test results indicated that the barrier with the Al interlayer prevented Cu diffusion into the Si up to 650 °C, which is 250 °C higher than achieved by a TiN(10 nm) barrier. © 2001 American Institute of Physics.
ACCESSION #
5319220

 

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