TITLE

Abnormal temperature behavior of photoluminescence from self-assembled InAs/AlAs quantum dots

AUTHOR(S)
Ma, Zhixun; Pierz, Klaus; Hinze, Peter
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2564
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the temperature dependence of photoluminescence (PL) from self-assembled InAs/AlAs quantum dots (QDs). In the temperature range of 6–90 K, an abnormal blueshift of the first excited-state emission and an enhancement of the ground-state PL are observed. This is explained by carrier transfer within spatially coupled QDs with a reduced barrier between, which give rise to a small activation energy of about 2 meV. Based on the analysis of the PL intensities, the rapid redshift of the ground- and excited-state emissions with respect to the InAs band gap in the temperature range of 90–283 K is explained by stepwise carrier escape from the QDs via the excited states. © 2001 American Institute of Physics.
ACCESSION #
5319215

 

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