Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

Babin´ski, Adam; Jasin´ski, J.; Boz.ek, R.; Szepielow, A.; Baranowski, J. M.
October 2001
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2576
Academic Journal
The effect of postgrowth rapid thermal annealing (RTA) on GaAs proximity-capped structures with self-assembled InAs/GaAs quantum dots (QDs) is investigated using transmission electron microscopy (TEM) and photoluminescence (PL). As can be seen from the TEM images, QDs increase their lateral sizes with increasing annealing temperature (up to 700 °C). QDs cannot be distinguished after RTA at temperature 800 °C or higher, and substantial thickening of the wetting layer can be seen instead. The main PL peak blueshifts as a result of RTA. We propose that in the as-grown sample as well, as in samples annealed at temperatures up to 700 °C, the peak is due to the QDs. After RTA at 800 °C and higher the PL peak is due to a modified wetting layer. Relatively fast dissolution of QDs is explained in terms of strain-induced lateral Ga/In interdiffusion. It is proposed that such a process may be of importance in proximity-capped RTA, when no group-III vacancy formation takes place at the sample/capping interface. © 2001 American Institute of Physics.


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