Study of band structure in PbSe/PbSrSe quantum wells for midinfrared laser applications

Shen, W. Z.; Wang, K.; Jiang, L. F.; Wang, X. G.; Shen, S. C.; Wu, H. Z.; McCann, P. J.
October 2001
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2579
Academic Journal
The electronic states in PbSe/Pb[sub 0.934]Sr[sub 0.066]Se multiple-quantum-well structures (MQWs) grown by molecular-beam epitaxy have been investigated both theoretically and experimentally for the midinfrared laser applications. With the aid of combined temperature-dependent photoluminescence and absorption measurements on a Pb[sub 0.934]Sr[sub 0.066]Se thin film for the effective masses and temperature-dependent band gaps, we find that the PbSe/PbSrSe MQWs have type-I band alignment and the conduction band offset ratio is Q[sub c]=0.82±0.03. The calculation, taking into account the strain, carrier confinements, and the multivalley band structure, can well explain both the observed luminescence peak energies and the temperature coefficient of the luminescence peaks as a function of well thickness. © 2001 American Institute of Physics.


Related Articles

  • Electronic states in diffused quantum wells. Vlaev, S.; Contreras-Solorio, D.A. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3853 

    Calculates the energy values and the spatial distribution of the bound electronic states in diffused quantum wells. Optical properties of the quantum well structures; Comparison between calculated and measured transition energies; Optical transitions between the excited electron and hole states.

  • Electronic Structure and Polarizability of Quantum Metallic Wires. Smogunov, A. N.; Kurkina, L. I.; Farberovich, O. V. // Physics of the Solid State;Oct2000, Vol. 42 Issue 10, p1898 

    The electronic structure and the linear response to an external electric field of simple metal wires with a quantum-size cross-section have been studied within the density-functional theory and the "jellium" model. It is found that an increase in the wire radius leads to a nonmonotonic change in...

  • Asymmetric Stark Shifts in In[sub0.18]Ga[sub0.82]As/GaAs near-surface quantum wells: The image charge effect. Chang, Kai; Peeters, F. M. // Journal of Applied Physics;11/1/2000, Vol. 88 Issue 9, p5246 

    Investigates the electronic structure of near-surface quantum wells within the framework of the effective mass theory. Effect of capped layer thickness on energies of electron and hole states; Asymmetric Stark shift with respect to the applied electric field; Changes in the spatial distribution...

  • Model of a quantum well rolled up into a cylinder and its application to the calculation of the energy structure of tubelene. Mel�nikov, L. A.; Kurganov, A. V. // Technical Physics Letters;Jan97, Vol. 23 Issue 1, p65 

    A model is presented for a quantum well rolled up into a cylinder and is used to describe the electronic structure of tubular clusters of carbon and the systems formed by them. The energy levels of a tubulene molecule are calculated. The estimates of the ionization potential and the nature of...

  • An envelope function description of the quantum well formed in AlxGa1-xAsySb1-y/InAs/AlxGa1-xAsySb1-y heterostructures. Anwar, A. F. M.; Webster, Richard T. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6827 

    Presents a study which utilized a self-consistent solution to model the quantum well formed in the conduction band of an AlGaAsSb/InAs/AlGaAsSb heterostructure. Calculation of the quantum mechanical properties of the heterostructure by Schrödinger and Poisson equations; Implication of the...

  • Electronic and shallow donor impurity states in GaAs-Ga1-xAlxAs quantum-well wires: Effects of dielectric mismatch. Deng, Zhen-Yan; Lai, Ting-Rong; Guo, Jing-Kun; Gu, Shi-Wei // Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7389 

    Presents a study which investigated the effects of image potential due to dielectric mismatch on electronic and shallow donor impurity states in GaAs-Ga[sub1-x]Al[subx]As quantum-well wires. Effects of image potential on electronic states; Calculation of the effects of image potential on...

  • Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasers. Suzuki, Masakatsu; Uenoyama, Takeshi // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6868 

    Presents a study which examined the effect of electronic and optical properties of gallium nitride and aluminum gallium nitride quantum well lasers. Clarification on the strain effect of lasers; Structural description of the quantum wells; Optical gains of the quantum well structure.

  • The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy. Dalfors, J.; Lundström, T.; Holtz, P. O.; Radamson, H. H.; Monemar, B.; Wallin, J.; Landgren, G. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6855 

    Presents a study which examined the excitonic transitions in high quality metalorganic vapor phase epitaxy grown indium gallium arsenide and indium phosphide quantum wells. Electronic structure of the quantum wells; Deatils on the Fourier transform photoluminescence; Results.

  • Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering. Reithmaier, J.-P.; Höger, R.; Riechert, H.; Heberle, A.; Abstreiter, G.; Weimann, G. // Applied Physics Letters;2/5/1990, Vol. 56 Issue 6, p536 

    Pseudomorphic InGaAs/GaAs multiple quantum well structures with In contents ranging from 18 to 25% were grown by molecular beam epitaxy and investigated by optical absorption, photoluminescence, and electronic Raman scattering. Sharp exciton peaks with linewidths of ∼3 meV for the first...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics