Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki
October 2001
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2588
Academic Journal
A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In[sub 0.19]Ga[sub 0.81]N showed the lowest specific contact resistance of 1.1×10[sup -6] Ω cm². The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN. © 2001 American Institute of Physics.


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