Superconducting magnesium diboride films on Si with T[sub c0]∼24 K grown via vacuum annealing from stoichiometric precursors

Zhai, H. Y.; Christen, H. M.; Zhang, L.; Cantoni, C.; Paranthaman, M.; Sales, B. C.; Christen, D. K.; Lowndes, D. H.
October 2001
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2603
Academic Journal
Superconducting magnesium diboride films with T[sub c0]∼24 K and sharp transition ∼1 K were prepared on Si by pulsed-laser deposition from stoichiometric MgB[sub 2] target. Contrary to previous reports, anneals at 630 °C and a background of 2×10[sup -4] Ar/4%H[sub 2] were performed without the requirement of Mg vapor or Mg cap layer. This integration of superconducting MgB[sub 2] film on Si may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy show that the films have a uniform surface morphology and thickness. Energy-dispersive spectroscopy study reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low T[sub c] for those in situ annealed films, while the use of Si as a substrate does not result in a decrease in T[sub c] as compared to other substrates. © 2001 American Institute of Physics.


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