TITLE

Electrical characteristics of a Dy-doped HfO[sub 2] gate dielectric

AUTHOR(S)
Lee, Hyelan; Jeon, Sanghun; Hwang, Hyunsang
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2615
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter describes a process for the preparation of high-quality Dy-doped HfO[sub 2] for use in gate dielectric applications. Compared with conventional undoped HfO[sub 2], the HfO[sub 2] gate dielectric which contains an optimum concentration of Dy exhibits the lowest leakage current and minimum effective oxide thickness. The lower electronegativity and larger atomic radii of Dy contribute to the improvement in leakage current for Dy-doped HfO[sub 2]. The Dy-doped HfO[sub 2] is a promising gate dielectric layer for use in future high-k gate dielectric applications. © 2001 American Institute of Physics.
ACCESSION #
5319197

 

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