Thermal stability and diffusion in gadolinium silicate gate dielectric films

Landheer, D.; Wu, X.; Morais, J.; Baumvol, I. J. R.; Pezzi, R. P.; Miotti, L.; Lennard, W. N.; Kim, J. K.
October 2001
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2618
Academic Journal
Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800 °C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating oxygen vacancies, but Si diffusion, previously observed in Al and Y oxides and in La and Zr silicate films, was absent. Higher-temperature annealing in oxygen resulted in the formation of an interfacial layer observable in high-resolution electron micrographs. Gd[sub 0.23]Si[sub 0.14]O[sub 0.63] films crystallize at temperatures between 1000 and 1050 °C. These observations combined with recent electrical measurements show that gadolinium silicate films may be a good candidate for the replacement of SiO[sub 2] in deep submicron metal–oxide–semiconductor gates.


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