TITLE

Degradation of ultrathin oxides by iron contamination

AUTHOR(S)
Choi, B. D.; Schroder, D. K.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2645
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Iron-contaminated oxides of metal-oxide-semiconductor devices were investigated to study gate oxide integrity (GOI) degradation dependence on oxide thickness for oxide thicknesses from 3 to 5 nm and iron densities from 4×10[sup 10] to 1.4×10[sup 12] cm[sup -3]. In contrast to other publications, we show that oxides as thin as 3 nm show gate oxide integrity degradation, especially for the higher iron densities. But even for the low iron density we observe GOI degradation for all oxides. © 2001 American Institute of Physics.
ACCESSION #
5319187

 

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