TITLE

In situ threshold photoemission yields correlated to surface reconstructions of InAs (001)

AUTHOR(S)
Zinck, J. J.; Ross, R. S.; Owen, J. H. G.; Barvosa-Carter, W.; Grosse, F.; Ratsch, C.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2354
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Threshold photoemission yields for As and In terminated reconstructions of InAs (001) are measured in situ and the variation of the photoyield is correlated with the surface stoichiometry. A significant excess in the measured photoelectron yield is found for the In terminated surfaces. These results are compared to a semiempirical model based on density-functional theory calculations of the surface local densities of states for the As terminated β2-(2×4) and newly predicted ζ-(4×2) reconstructions. The calculations are in good agreement with the measured trends, and provide a basis for the interpretation of threshold photoemission sensor signatures. © 2001 American Institute of Physics.
ACCESSION #
5306375

 

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