Stress relaxation effect in porous 3C-SiC/Si heterostructure by micro-Raman spectroscopy

Lysenko, V.; Barbier, D.; Champagnon, B.
October 2001
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2366
Academic Journal
Cubic (3C) SiC layers with initial biaxial stress value of about 0.4 GPa are observed by micro-Raman scattering measurements to be completely relaxed after formation of a porous network in the 3C-SiC/Si heterostructure. The porous heterostructure is obtained by an anodization procedure in HF acid solutions usually used for porous Si fabrication. The influence of some anodization parameters such as the anodization current density, HF concentration, and anodization depth on the stress relaxation effect is described. The relaxation is found to be mainly due to pore formation at the 3C-SiC/Si interface. © 2001 American Institute of Physics.


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