TITLE

Structural phase transition as a mechanism for broadband, low-threshold reflectivity switching in gallium

AUTHOR(S)
MacDonald, K. F.; Fedotov, V. A.; Zheludev, N. I.; Zhdanov, B. V.; Knize, R. J.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2375
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report that a nanoscale laser-induced structural phase transition involving just a few nanometers of gallium at an interface with silica can drive reversible changes in the optical properties of the interface in a very broad spectral range from 440 to 680 nm and beyond. At temperatures up to 15° below the melting point of gallium (30 °C) 3 ns excitation pulses, with fluences of just a few mJ/cm2, are sufficient to induce reflectivity increases of up to 40%. © 2001 American Institute of Physics.
ACCESSION #
5306368

 

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