Evidence for the precursors of nitrided silicon in the early stages of silicon oxynitridation in N[sub 2]:N[sub 2]O atmosphere

Cerofolini, G. F.; Camalleri, M.; Galati, C.; Lorenti, S.; Renna, L.; Viscuso, O.; Condorelli, G. G.; Fragala`, I. L.
October 2001
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2378
Academic Journal
Nitridation of hydrogen-terminated silicon with N[sub 2]:N[sub 2]O has been studied by x-ray photoemission spectroscopy. Our analysis has given evidence that the broad N(1s) peak at 398–399 eV, usually reported in the literature, is preceded by the formation of a narrow peak at 397.5 eV, attributed to the moiety Si[sub 3]N in which silicon is only marginally oxidized, and two other peaks at 400.0 eV and 401.5 eV, attributed to the moieties Si[sub 2]NOSi and SiNO, respectively. © 2001 American Institute of Physics.


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