Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy

Tsai, H. M.; Jan, J. C.; Chiou, J. W.; Pong, W. F.; Tsai, M.-H.; Chang, Y. K.; Chen, Y. Y.; Yang, Y. W.; Lai, L. J.; Wu, J. J.; Wu, C. T.; Chen, K. H.; Chen, L. C.
October 2001
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2393
Academic Journal
X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si–C–N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si–C–N contain a relatively large 1s→π[sup *] peak, indicating that a substantial percentage of carbon atoms in the a-Si–C–N films have sp[sup 2] or graphite-like bonding. Both the observed sp[sup 2] intensity and the Young’s modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si–C–N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride. © 2001 American Institute of Physics.


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