High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells

Dharmarasu, Nethaji; Yamaguchi, Masafumi; Khan, Aurangzeb; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Takamoto, Tatsuya; Ohshima, Takeshi; Itoh, Hisayoshi; Imaizumi, Mitsuru; Matsuda, Sumio
October 2001
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2399
Academic Journal
The radiation response of 3 MeV proton-irradiated InGaP, InGaAsP and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The degradation of the minority-carrier diffusion length was estimated from the spectral response data. The damage coefficient K[sub L] for the 3 MeV proton-irradiated InGaP, InGaAsP and InGaAs was also determined. The radiation resistance increases with an increase in the fraction of In–P bonds in InGaP, InGaAsP and InGaAs. Differences in the radiation resistance of InGaP, InGaAs and InGaAs materials are discussed. Minority-carrier injection under forward bias is found to cause partial recovery of the degradation on irradiated InGaP and InGaAsP cells. © 2001 American Institute of Physics.


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