Deep levels of tantalum in silicon carbide and incorporation during crystal growth

Grillenberger, J.; Pasold, G.; Witthuhn, W.; Achtziger, N.
October 2001
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2405
Academic Journal
Band-gap states of tantalum in n-type 6H– and 15R–silicon carbide (SiC) were investigated by deep-level transient spectroscopy (DLTS). The samples were doped with Ta by ion implantation followed by an annealing procedure. DLTS measurements reveal two implantation-induced band-gap states in each polytype. These donor-like levels (located at E[sub C]-0.46 eV and E[sub C]-0.49 eV in 6H– and E[sub C]-0.43 eV and E[sub C]-0.46 eV in 15R–SiC) are assigned to Ta occupying inequivalent lattice sites in the SiC crystals. The investigation of 6H–SiC bulk material grown in an atmosphere containing Ta indicates the incorporation of Ta in these crystals during growth. © 2001 American Institute of Physics.


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