TITLE

p–n diode with hole- and electron-doped lanthanum manganites

AUTHOR(S)
Mitra, C.; Raychaudhuri, P.; Ko¨bernik, G.; Do¨rr, K.; Mu¨ller, K.-H.; Schultz, L.; Pinto, R.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2408
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The hole-doped (p-) manganite La[sub 0.7]Ca[sub 0.3]MnO[sub 3] and the electron-doped (n-) manganite La[sub 0.7]Ce[sub 0.3]MnO[sub 3] undergo an insulator-to-metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have fabricated an epitaxial trilayer (La[sub 0.7]Ca[sub 0.3]MnO[sub 3]/SrTiO[sub 3]/La[sub 0.7]Ce[sub 0.3]MnO[sub 3]), where SrTiO[sub 3] is an insulator. At room temperature, i.e., in the semiconducting regime, it exhibits asymmetric current–voltage (I–V) characteristics akin to a p–n diode. The observed asymmetry in the I–V characteristics disappears at low temperatures where both the manganite layers are metallic. These results indicate that using the polaronic semiconducting regime of doped manganites, a p–n diode can be constructed. © 2001 American Institute of Physics.
ACCESSION #
5306357

 

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