Paramagnetism and antiferromagnetic dâ€“d coupling in GaMnN magnetic semiconductor
- Electron spin resonance of antisite defects in as-grown and plastically deformed GaP. Palm, J.; Kisielowski-Kemmerich, C.; Alexander, H. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p68
Studies the electron spin resonance of antisite defects in as-grown and plastically deformed semiconductor GaP. Ligand hyperfine interactions; Contrary linewidth changes shown by the spectra.
- Effect of Ga Substitution on the Magnetic State of Delafossite CuCrO with Antiferromagnetic Triangular Sublattice. Elkhouni, T.; Colin, C.; Strobel, P.; Ben Salah, A.; Amami, M. // Journal of Superconductivity & Novel Magnetism;Jun2013, Vol. 26 Issue 6, p2125
We investigated the effect of spin dilution on the structural and magnetic properties of delafossite CuCrO having an S=3/2 antiferromagnetic triangular lattice (ATL) by the substitution of Ga for Cr by measurements of magnetization. Spin defects introduced into Cr ATL layers blur the...
- Low-temperature relaxation of a solid solution of iron in gallium phosphide. Demidov, E. S.; Karzanov, V. V.; Gromoglasova, A. B.; Morozkin, O. N. // Semiconductors;Apr99, Vol. 33 Issue 4, p377
Electron spin resonance (ESR) and the Hall effect are used to investigate low-temperature relaxation of solid solutions of iron in gallium phosphide, as well as the distribution profiles for paramagnetic iron centers in GaP located at A-site (g = 2.02) and B-site (g = 2.133). The data obtained...
- Intrinsic Defects in GaN and ZnO: A Study by Optical Detection of Electron Paramagnetic Resonance. Watkins, George D. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p245
Intrinsic defects are introduced by 2.5 MeV electron irradiation in situ at 4.2 K. In GaN, interstitial Ga is detected prior to any annealing step in a broad photo-luminescence (PL) band at 0.95 eV, which is produced by the irradiation. Two distinct configurations are observed for it, and...
- Ground State of Fermi Systems with Strong Short-Range Order. Kudasov, Yu. B. // Journal of Experimental & Theoretical Physics;Mar2000, Vol. 90 Issue 3, p544
A new variational method is developed to calculate the ground-state energy of a fermion system with strong short-range order. As well as intrasite correlations, the Gutzwiller trial wave function explicitly contains nearest-neighbor correlations. The Kikuchi pseudo-ensemble method was used to...
- Passivation and activation of Mg acceptors in heavily doped GaN. Zvanut, M. E.; Uprety, Y.; Dashdorj, J.; Moseley, M.; Alan Doolittle, W. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 4, p044508
Electron paramagnetic resonance measurements are used to monitor the passivation and activation of the Mg-related acceptor in GaN doped with different concentrations of Mg, up to 2 Ã— 1020 cm-3. Samples were annealed in either forming gas (H2:N2) or pure N2 between 200 and 900 Â°C. As...
- Electrical resistivity of antiferromagnetic and paramagnetic Cr-Mo-Si alloys. Smit, P.; Alberts, H. L. // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p4677
Presents information on a study which examined the resistivity measurements on antiferromagnetic and paramagnetic Cr-Mo-Si alloys. High-temperature behavior of the alloys; Experimental procedure; Results and discussion; Conclusions.
- Electron Spin Resonance Study of the Dynamic Magnetic Susceptibility of CuO, Cu[sub 1 â€“ ][sub x]Zn[sub x]O, and Cu[sub 1 â€“ ][sub x]Li[sub x]O Single Crystals. Ryzhov, V. A.; Lazuta, A. V.; Kiselev, I. A.; Luzyanin, I. D.; Arbuzova, T. I. // Journal of Experimental & Theoretical Physics;Feb2000, Vol. 90 Issue 2, p341
Results are presented of studies of the dynamic magnetic susceptibility of CuO, Cu[sub 1-x]Zn[sub x]O (x â‰ˆ 1.5%), and Cu[sub 1-x]Li[sub x]O (x â‰ˆ 1%) single crystals. The orientational dependence of the ESR spectra was investigated at room temperature. The results for Cue are analyzed...
- Electron spin resonance of the two-dimensional antiferromagnet Cs2MnCl4. Zaspel, C. E. // Journal of Chemical Physics;8/1/1985, Vol. 83 Issue 3, p1431
The angular dependence of the line shape of Cs2MnCl4 indicates that this compound is a two-dimensional antiferromagnet. However, the angular dependence of the linewidth is smaller than expected. An intraplane exchange constant of J/kB =12.6 K is obtained.