Interface reactions of high-κ Y[sub 2]O[sub 3] gate oxides with Si

Busch, B. W.; Kwo, J.; Hong, M.; Mannaerts, J. P.; Sapjeta, B. J.; Schulte, W. H.; Garfunkel, E.; Gustafsson, T.
October 2001
Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2447
Academic Journal
Ultrathin Y[sub 2]O[sub 3] films were electron beam evaporated in an ultrahigh vacuum onto Si(100) and investigated by high-resolution medium energy ion scattering. Selected films were capped in situ with amorphous Si. Uncapped films that were exposed to air prior to analysis contained excess oxygen compared to a stoichiometric Y[sub 2]O[sub 3] film, and showed a 6–8 Å interfacial layer. Si uptake from the substrate occurred in these films after a 700 °C vacuum anneal, presumably by reacting with the excess oxygen. Si-capped Y[sub 2]O[sub 3] films on the other hand were stoichiometric, and the substrate interface was sharp (<=2 Å), even after 900 °C vacuum anneals. No change was seen at the Y[sub 2]O[sub 3] capping layer interface until >=800 °C for vacuum anneals. These measurements indicate that control of the interface composition is not possible after exposure of ultrathin Y[sub 2]O[sub 3] films to air. © 2001 American Institute of Physics.


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