TITLE

Numerical simulation of impact ionization in Ge/AlxGa1-xAs avalanche photodiode

AUTHOR(S)
Chia, C. K.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Impact ionization in Ge/AlxGa1-xAs p-i-n heterostructures has been studied using the Monte Carlo technique. The thin (<300 nm) Ge/AlxGa1-xAs single heterojunction structure was found to exhibit large hole (β) to electron (α) ionization coefficient ratio, owing to a higher β in the Ge layer and a lower α in the AlxGa1-xAs layer, together with the dead space effects. The Ge/AlxGa1-xAs avalanche photodiodes are attractive for applications where a wide wavelength detection range is required for compatibility with multiple sources such as in the emerging active optical cable and optical interconnect applications, as well as in the established optical fiber telecommunication systems.
ACCESSION #
52997971

 

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