Experimental determination of wave function spread in Si inversion layers

Majumdar, Amlan
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p072104
Academic Journal
We have experimentally determined the extent of wave function spread TQM in Si inversion layers on (100)-oriented surface in metal-oxide-semiconductor field-effect transistors (MOSFETs) using the back gate bias sensitivity of front gate threshold voltage of planar fully depleted silicon-on-insulator (SOI) MOSFETs. We show that the sum of TQM for large positive and negative F is an electrically determined value of the SOI thickness TSI. We find that the electric field dependence of TQM for electrons and holes is given by TQM∼F-0.4 and F-0.6, respectively, at high electric fields with TQM being larger for holes at a given F. Larger TQM for holes can be explained by the fact that holes have a smaller effective mass along the confinement direction than electrons in (100) Si. The field dependences of TQM are, however, not consistent with the results of variational calculations that assume single-subband occupancy and predict TQM∼F-1/3. The discrepancy likely indicates that the effects of multiple-subband occupation are significant at room temperature, especially for holes.


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