TITLE

Surface carrier recombination of a silicon tip under high electric field

AUTHOR(S)
Mazumder, B.; Vella, A.; Vurpillot, F.; Martel, G.; Deconihout, B.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using laser assisted atom probe tomography, we investigate the surface recombination processes of a subwavelength Si tip illuminated by an ultrashort laser pulse under high electric field. In practice, by changing the laser wavelength, we demonstrate the presence of a very long electron-phonon relaxation time at the surface. It is experimentally shown that this behavior is common to indirect band gap semiconductors. Furthermore, a simple model is developed in this paper to explain laser wavelength dependence of our experimental results and estimate the surface recombination time.
ACCESSION #
52997957

 

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