Surface carrier recombination of a silicon tip under high electric field

Mazumder, B.; Vella, A.; Vurpillot, F.; Martel, G.; Deconihout, B.
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073104
Academic Journal
Using laser assisted atom probe tomography, we investigate the surface recombination processes of a subwavelength Si tip illuminated by an ultrashort laser pulse under high electric field. In practice, by changing the laser wavelength, we demonstrate the presence of a very long electron-phonon relaxation time at the surface. It is experimentally shown that this behavior is common to indirect band gap semiconductors. Furthermore, a simple model is developed in this paper to explain laser wavelength dependence of our experimental results and estimate the surface recombination time.


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