TITLE

Low-threshold terahertz quantum-cascade lasers based on GaAs/Al0.25Ga0.75As heterostructures

AUTHOR(S)
Wienold, M.; Schrottke, L.; Giehler, M.; Hey, R.; Anders, W.; Grahn, H. T.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p071113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the influence of the barrier composition on the performance of GaAs-based terahertz (THz) quantum-cascade lasers (QCLs). Based on a nine-quantum-well active region design for 3–4 THz emission, QCLs with an Al content of x=0.15 and x=0.25 in the AlxGa1-xAs barriers are compared. We found a significantly reduced threshold current density for QCLs with x=0.25 as compared to QCLs with x=0.15, which is due to a weaker coupling of the subband states. The maximum output power and operating temperature of such lasers are reduced due to the onset of negative differential resistance.
ACCESSION #
52997948

 

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