Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

Tien-Chang Lu; Shih-Wei Chen; Tzeng-Tsong Wu; Po-Min Tu; Chien-Kang Chen; Cheng-Hung Chen; Zhen-Yu Li; Hao-Chung Kuo; Shing-Chung Wang
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p071114
Academic Journal
We report the demonstration of the continuous wave laser action on GaN-based vertical cavity surface emitting lasers at room temperature. The laser structure consists of a ten-pair Ta2O5/SiO2 distributed Bragg reflector (DBR), a 7λ-thick optical cavity, ten-pairs InGaN/GaN multiquantum wells with an AlGaN electron blocking layer, and a 29-pair AlN/GaN DBR. The laser has a threshold current of about 9.7 mA corresponding to the current density of about 12.4 kA/cm2 and a turn-on voltage about 4.3 V at 300 K. The lasing wavelength was 412 nm with a linewidth of about 0.5 nm. A spontaneous emission coupling efficiency factor of about 5×10-3 and the degree of polarization of about 55% were measured, respectively. The laser beam has a narrow divergence angle of about 8°.


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