TITLE

Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

AUTHOR(S)
Yabuta, Hisato; Kaji, Nobuyuki; Hayashi, Ryo; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p072111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin film transistors (TFTs) using polycrystalline tin oxides (SnO–SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p-type operation with on/off current ratios of ∼102 and field-effect mobilities of 0.24 cm2 V-1 s-1. Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n-type operation. This result is explained by transformation to a local SnO2-like structure and finally to SnO2. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p- and n-channel TFTs.
ACCESSION #
52997945

 

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