Electron microscopy of GaAs/MnAs core/shell nanowires

Dellas, N. S.; Liang, J.; Cooley, B. J.; Samarth, N.; Mohney, S. E.
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p072505
Academic Journal
GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of [formula] MnAs∥[111]GaAs and (0110) MnAs∥GaAs (110). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs∥[0001]GaAs and (1210) MnAs∥(1210)GaAs.


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