Microcrystalline silicon thin-film transistors operating at very high frequencies

Marinkovic, Marko; Hashem, Elias; Kah-Yoong Chan; Gordijn, Aad; Stiebig, Helmut; Knipp, Dietmar
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073502
Academic Journal
The switching behavior of hydrogenated microcrystalline silicon thin-film transistors (TFTs) was examined and switching frequencies exceeding 20 MHz were measured for short channel devices. The microcrystalline silicon TFTs were prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with plastic substrates. The realized microcrystalline silicon transistors exhibit high electron charge carrier mobilities of 130 cm2/V s. The switching frequency is limited by the contact resistances and overlap capacitances between the gate and the drain/source electrodes. Switching frequencies larger than 20 MHz were measured for transistors with a channel length of 5 μm. The high switching frequencies facilitate the realization of radio-frequency identification tags operating at 13.56 MHz.


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