Defect activation in willemite-type Zn2GeO4 by nanocrystallization

Takahashi, Yoshihiro; Ando, Masataka; Iwasaki, Kenichiro; Masai, Hirokazu; Fujiwara, Takumi
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p071906
Academic Journal
We demonstrated the selective introduction of interstitial Zn defects (Zni•) into willemite-type semiconductive Zn2GeO4 by nanocrystallization of 15Li2O–15ZnO–70GeO2 glass. The resulting nanocrystallized glass consisting of Zn2GeO4 exhibited a long-lasting photoluminescence (LLP). It is suggested that the Zni• is produced by capturing a zinc ion through six-membered rings of the Zn2GeO4 phase during nanocrystallization and the excess Zni• acts as an electron trap for the LLP. This defect activation through nanocrystallization is a promising new approach to functionalization.


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