TITLE

Alternative sources of p-type conduction in acceptor-doped ZnO

AUTHOR(S)
Limpijumnong, Sukit; Gordon, Luke; Miao, Maosheng; Janotti, Anderson; Van de Walle, Chris G.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p072112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report first-principles calculations and interface simulations for Zn3P2, a compound that may form during doping of ZnO with phosphorous. While P is a deep acceptor in ZnO and thus unable to produce p-type conductivity, we show that hole accumulation can occur at ZnO/Zn3P2 interfaces due to the unusual valence-band alignment between the two materials. This provides an explanation for the hole conductivity that has been observed in Hall measurements on phosphorous-doped ZnO.
ACCESSION #
52997922

 

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