Highly conductive ZnO grown by pulsed laser deposition in pure Ar

Scott, Robin C.; Leedy, Kevin D.; Bayraktaroglu, Burhan; Look, David C.; Yong-Hang Zhang
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p072113
Academic Journal
Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.


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