InGaN/GaN multiple quantum well concentrator solar cells

Dahal, R.; Li, J.; Aryal, K.; Lin, J. Y.; Jiang, H. X.
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073115
Academic Journal
We present the growth, fabrication, and photovoltaic characteristics of Inx Ga1-xN/GaN(x∼0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.


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