Domain wall assisted magnetization switching in (111) oriented L10 FePt grown on a soft magnetic metallic glass

Kaushik, Neelam; Sharma, Parmanand; Yubuta, Kunio; Makino, Akihiro; Inoue, Akihisa
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p072510
Academic Journal
We report on growth and magnetic properties of exchange-coupled (111)-L10 FePt hard/CoFeTaB soft magnetic metallic glass bilayered structure processed at lower temperature (∼400 °C). Single phaselike hysteresis loops with tailorable coercivity (<8.2 kOe) in out of plane direction are obtained. The magnetization switching mechanism is identified as domain wall assisted. In views of excellent nanofabrication abilities of metallic glass thin film and the ability to grow preferred oriented L10 FePt, the present bilayered structure is very promising for the fabrication of high density bit—patterned magnetic recording media and other spintronic devices.


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