TITLE

Ferromagnetic resonance in double perovskite epitaxial thin films of La2NiMnO6 on SrTiO3 and NdGaO3 substrates

AUTHOR(S)
Kazan, S.; Mikailzade, F. A.; Özdemir, M.; Aktaş, B.; Rameev, B.; Intepe, A.; Gupta, A.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p072511
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ferromagnetic resonance (FMR) studies of epitaxial La2NiMnO6 (LNMO) thin films on (100) oriented SrTiO3 and (110) oriented NdGaO3 substrates at room temperature are presented. Observation of FMR spectra above the Curie temperature of this compound confirms the presence of magnetic ordering in LNMO thin films at room temperature. Best fitting of FMR spectra has been made on the assumption of the coexistence of two magnetic phases with different easy and hard axis periodicities in the film plane of LNMO. The spectra of the films on various substrates are characterized by different in-plane and out-of-plane symmetries, which indicates the existence of different epitaxial growth on the substrates with different crystal symmetries and orientations.
ACCESSION #
52997913

 

Related Articles

  • Magnetic inhomogeneities and spin reorientation dependent magnetoresistance in HoNi5 thin films. Singh, Gyanendra; Joshi, P. C.; Budhani, R. C. // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p113915 

    We report measurements of electrical resistivity and magnetization in thin films of HoNi5 grown on (100) MgO substrate by means of pulsed laser deposition technique. These films are polycrystalline with a typical grain size of ≈10 nm and a random grain orientation. The temperature...

  • Growth and spin-wave properties of thin Y3Fe5O12 films on Si substrates. Stognij, A. I.; Lutsev, L. V.; Bursian, V. E.; Novitskii, N. N. // Journal of Applied Physics;2015, Vol. 118 Issue 2, p23905-1 

    We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on Si substrates and present results of the investigation of ferromagnetic resonance (FMR) and spin waves in YIG/SiO2/Si structures. It is found that decrease of the annealing time leads to essential reduction of the FMR linewidth...

  • Ferromagnetic resonance line width in magnetic films as a function of temperature. Lebecki, Kristof M. // Journal of Applied Physics;2015, Vol. 117 Issue 17, p17E308-1 

    Ferromagnetic resonance (FMR) experiment is considered for the case of a constant field applied in plane of a thin film. Role of temperature is investigated by replacing the Landau-Lifshitz-Gilbert equation by the Landau-Lifshitz-Bloch approach. Two important FMR parameters are evaluated: the...

  • Epitaxial La2/3Sr1/3MnO3 thin films with metallic behavior above the Curie temperature. Bertacco, R.; Riva, M.; Cantoni, M.; Signorini, L.; Ciccacci, F. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252502 

    Despite its half-metallic character, La2/3Sr1/3MnO3 is currently not considered a good candidate for real spin electronic devices due to the dramatic deterioration of its spin polarization at room temperature. Using pulsed-laser deposition, we have grown thin films of La2/3Sr1/3MnO3, which...

  • Influence of substrate on the high-frequency permeability of thin iron films. Starostenko, S.; Rosanov, K.; Maklakov, S.; Ryzhikov, I. // Journal of Communications Technology & Electronics;Aug2013, Vol. 58 Issue 8, p821 

    The ferromagnetic resonance (FMR) spectra of thin metallic films obtained by magnetron deposition on polymeric and ceramic substrates are investigated in the strip line at frequencies of 0.13-12 GHz via frequency and external magnetic field sweeping. The influence of mechanical stresses on the...

  • Triclinic phase in tilted (001) oriented BiFeO3 epitaxial thin films. Li Yan; Hu Cao; Jiefang Li; Viehland, D. // Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p132901 

    We report a triclinic phase in perovskite BiFeO3 (BFO) epitaxial thin films grown on (130) and (120) oriented SrTiO3 substrates. The lattice constants of the BFO thin films changed with tilt of the substrates from (001) toward (110). These lattice parameters result from the epitaxially...

  • Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films. Yang, Z.; Zhou, H. M.; Chen, W. V.; Li, L.; Zhao, J. Z.; Yu, P. K. L.; Liu, D. J. L. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p066101 

    Epitaxial ZnO thin films were grown on r-plane sapphire substrates using plasma-assisted molecular-beam epitaxy. ZnO homobuffer layers grown at a lower temperature were introduced to improve the crystallinity of the top ZnO thin films. Thicker homobuffer layers lead to better crystallinity of...

  • Defects limiting performance of devices fabricated on GaN/metal heterostructure. Maximenko, Serguei I.; Freitas, Jaime A.; Mittereder, Jeffrey A.; Rowland, Larry B.; Kim, Jihyun // Applied Physics Letters;5/26/2008, Vol. 92 Issue 21, p212104 

    Ni Schottky barrier contacts were processed to characterize quality and suitability of GaN films grown on (111) face of titanium carbide metallic substrates for vertical device application. We found that defects such as voids (pores) in the GaN film strongly influence the optical and electrical...

  • Bandgap bowing in BGaN thin films. Ougazzaden, A.; Gautier, S.; Moudakir, T.; Djebbour, Z.; Lochner, Z.; Choi, S.; Kim, H. J.; Ryou, J.-H.; Dupuis, R. D.; Sirenko, A. A. // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083118 

    We report on the bandgap variation in thin films of BxGa1-xN grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials’ properties of the BxGa1-xN films. In contrast...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics