Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Doyoung Jang; Jae Woo Lee; Tachi, Kiichi; Montes, Laurent; Ernst, Thomas; Gyu Tae Kim; Ghibaudo, Gerard
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073505
Academic Journal
Low-frequency noise has been studied in compressively strained Si0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, Nt, lies in the range of 2.9×1018–4.3×1019 cm-3 eV-1, which is similar to standard high-k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.


Related Articles

  • Wide-range thermometer based on the temperature-dependent conductance of planar tunnel junctions. Gloos, K.; Poikolainen, R. S.; Poikolainen, R.S.; Pekola, J. P.; Pekola, J.P. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    The effect of the Fermi-Dirac distribution on the current through standard planar tunnel junctions is a suitable basis for thermometry in a wide temperature range. In particular, it extends the range spanned by Coulomb-blockade thermometers up to room temperature. © 2000 American Institute of...

  • Coulomb blockade in a single tunnel junction directly connected to a multiwalled carbon nanotube. Haruyama, Junji; Takesue, Izumi; Sato, Yuki // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    We report on Coulomb blockade in a single tunnel junction directly connected to a multiwalled carbon nanotube (MWNT) by utilizing a nanoporous alumina film. The MWNT exhibits a weak localization effect with strong spin flip scattering. Experimental results and analysis suggest that a...

  • Noise measurements on junction field effect transistors. Pallottino, Giovanni Vittorio; Zirizzotti, Achille Emanuele // Review of Scientific Instruments;Jan1994, Vol. 65 Issue 1, p212 

    We report the experimental results of noise measurements performed on junction field effect transistors (2SK162) in the frequency range 1–100 kHz, where the internal correlation effects are not negligible. The experimental data have been analyzed to determine the input current noise...

  • Nonstationary 1/f noise in InP/InGaAs heterojunction bipolar transistors. Alers, G.B.; Martin, S. // Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p198 

    Explores nonstationary 1/f noise in indium phosphide/indium gallium arsenide heterojunction bipolar transistors. Application of higher order statistics to examine the source of noise; Presence of signatures of superimposed Lorentzians making up the noise spectrum; Correlation of the...

  • Junction field-effect transistors. Marston, Ray // Electronics Now;Apr93, Vol. 64 Issue 4, p64 

    Describes how to bias junction FET's (JFET) and apply them in practical amplifier, voltmeter, multivibrator, and converter circuits. Interesting characteristics that set the JFET apart from the bipolar transistor; Selection of practical JFET circuits that range from amplifiers and analog...

  • Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter... Llinares, P.; Celi, D.; Roux-dit-Buisson, O.; Ghibaudo, G.; Chroboczek, J. A. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2671 

    Studies low frequency noise in quasiself-aligned bipolar n-p-n junction transistors with varying emitter/base junction dimensions. Power spectral density; Localization of the low frequency noise sources; Application of current-to-voltage converters.

  • On noise sources in hot electron-degraded bipolar junction transistors. Llinares, P.; Ghibaudo, G.; Chroboczek, J. A. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2676 

    Studies the effects of electrical stress on static characteristics and power spectral density, of base current, fluctuations at low frequencies, in quasiself-aligned bipolar n-p-n junction. Generation of hot carrier-induced noise sources; Uniformity and reproducibility of the degradation process.

  • Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodes. Yu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C. // Applied Physics Letters;12/6/2010, Vol. 97 Issue 23, p231903 

    The effect of substrate misorientation on the material quality of the N++-GaAs/P++-AlGaAs tunnel diodes (TDs) grown on these substrates is investigated. It is found that the misorientation influences both surface roughness and interface properties of the N++-GaAs/P++-AlGaAs TDs. Smooth surface...

  • Simulation of junctionless Si nanowire transistors with 3 nm gate length. Ansari, Lida; Feldman, Baruch; Fagas, Giorgos; Colinge, Jean-Pierre; Greer, James C. // Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p062105 

    Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform proof-of-concept simulations of junctionless gated Si nanowire transistors. Based on first-principles, our primary predictions are that Si-based transistors are physically...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics