Influence of electrode size on resistance switching effect in nanogap junctions

Suga, Hiroshi; Horikawa, Masayo; Odaka, Shunsuke; Miyazaki, Hisao; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa
August 2010
Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073118
Academic Journal
The size dependence of the resistance switching effect in nanogap junctions was investigated to determine the nature of the local structural changes responsible for the effect. The maximum current, during resistance switching, decreased with the total emission area across the nanogap to an average of 146 μA at a linewidth of 45 nm. This implies that the resistance switching effect stems from changes in the gap width at multiple local sites on the metal surface.


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