TITLE

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

AUTHOR(S)
Xiaolei Wang; Kai Han; Wenwu Wang; Xueli Ma; Dapeng Chen; Jing Zhang; Jun Du; Yuhua Xiong; Anping Huang
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p062901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical characteristics of HfO2/SiO2 interface are comprehensively studied to clarify the intrinsic origin of flatband voltage (VFB) shift in metal-oxide-semiconductor (MOS) device with high-k/metal gate structure. A methodology for quantitative extraction of the interface dipole and chargers at high-k/SiO2 interface is proposed. The dipole and charges at HfO2/SiO2 interface are extracted to be about -0.38 V and -1.15×1013 cm-2, respectively. This result shows that the high density of negative charges at HfO2/SiO2 interface rather than the interface dipole are the dominant cause of the positive VFB shift in the MOS device with HfO2/SiO2 stack.
ACCESSION #
52929641

 

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