TITLE

Remarkably low turn-on field emission in undoped, nitrogen-doped, and boron-doped graphene

AUTHOR(S)
Palnitkar, U. A.; Kashid, Ranjit V.; More, Mahendra A.; Joag, Dilip S.; Panchakarla, L. S.; Rao, C. N. R.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p063102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Field emission studies have been carried out on undoped as well as N- and B-doped graphene samples prepared by arc-discharge method in a hydrogen atmosphere. These graphene samples exhibit very low turn-on fields. N-doped graphene shows the lowest turn-on field of 0.6 V/μm, corresponding to emission current density of 10 μA/cm2. These characteristics are superior to the other types of nanomaterials reported in the literature. Furthermore, emission currents are stable over the period of more than 3 h for the graphene samples. The observed emission behavior has been explained on the basis of nanometric features of graphene and resonance tunneling phenomenon.
ACCESSION #
52929637

 

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