Large internal dipole moment in InGaN/GaN quantum dots

Ostapenko, Irina A.; Hönig, Gerald; Kindel, Christian; Rodt, Sven; Strittmatter, André; Hoffmann, Axel; Bimberg, Dieter
August 2010
Applied Physics Letters;8/9/2010, Vol. 97 Issue 6, p063103
Academic Journal
Direct observation of large permanent dipole moments of excitonic complexes in InGaN/GaN quantum dots is reported. Characteristic traces of spectral diffusion, observed in cathodoluminescence of InGaN/GaN quantum dots, allow deducing the magnitude of the intrinsic dipole moment. Our experimental results are in good agreement with realistic calculations of quantum dot transition energies for position-dependent external electric fields.


Related Articles

  • Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot. Xia, Congxin; Zeng, Zaiping; Wei, Shuyi // Journal of Applied Physics;Nov2009, Vol. 106 Issue 9, p094301-1 

    Within the framework of the effective-mass approximation, the barrier width dependence of the donor binding energy of hydrogenic impurity in a cylindrical wurtzite (WZ) InGaN/GaN strained quantum dot (QD) is calculated by means of a variational procedure, considering the strong built-in electric...

  • Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots. Jin, Peng; Li, C. M.; Zhang, Z. Y.; Liu, F. Q.; Chen, Y. H.; Ye, X. L.; Xu, B.; Wang, Z. G. // Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2791 

    Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots (QDs), which are grown at relative low temperature (460°C) and embedded in GaAs p–i–n structure, have been studied by dc-biased electroreflectance. Franz–Keldysh oscillations...

  • Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers. Laghumavarapu, R. B.; El-Emawy, M.; Nuntawong, N.; Moscho, A.; Lester, L. F.; Huffaker, D. L. // Applied Physics Letters;12/10/2007, Vol. 91 Issue 24, p243115 

    We report optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar cells with and without GaP strain compensation (SC) layers. The short circuit current density, open circuit voltage, and external quantum efficiency of these cells under air mass 1.5 G...

  • Electron tomography of embedded semiconductor quantum dot. Inoue, Tomoya; Kita, Takashi; Wada, Osamu; Konno, Mitsuru; Yaguchi, Toshie; Kamino, Takeo // Applied Physics Letters;1/21/2008, Vol. 92 Issue 3, p031902 

    We performed an electron tomography for a single InAs quantum dot (QD) embedded in GaAs. A comprehensive three-dimensional image of indium distribution has been reconstructed by using a high-angle annular dark-field scanning transmission electron microscope. This was achieved by using a special...

  • Direct measurement of polarization resolved transition dipole moment in InGaAs/GaAs quantum dots. Silverman, K. L.; Mirin, R. P.; Cundiff, S. T.; Norman, A. G. // Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4552 

    The propagation of optical pulses resonant with the ground-to-excited state transition of InGaAs quantum dots is investigated. An analysis of low intensity excitation yields a dipole moment of 8.8 × 10[SUP-29] to 10.9 × 10[SUP-29] C m, depending on the quantum dot growth conditions. We...

  • Permanent dipole moment and charges in colloidal semiconductor quantum dots. Shim, Moonsub; Guyot-Sionnest, Philippe // Journal of Chemical Physics;10/15/1999, Vol. 111 Issue 15, p6955 

    Discusses permanent dipole moment and charges in colloidal semiconductor quantum dots. Understanding of nanocrystalline materials; Dielectric dispersion studies of metal nanocrystals; Polar nature of the wurtzite lattice; Dipole moments that may be intrinsic attributes to all nonmetal...

  • Path Integral Simulations of Charged Multiexcitons in InGaAs/GaAs Quantum Dots. Harowitz, M.; Shumway, J. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p697 

    We give an introduction and brief overview of our path integral simulation technique for quantum dots. We have studied the effects of spectators on photoluminescence spectra in an applied electric field. The path integral simulations also allow us to directly simulate the charge profile of the...

  • Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3 μm. Miyazawa, Toshiyuki; Nakaoka, Toshihiro; Usuki, Tatsuya; Tatebayashi, Jun; Arakawa, Yasuhiko; Hirose, Shinichi; Takemoto, Kazuya; Takatsu, Motomu; Yokoyama, Naoki // Journal of Applied Physics;Jul2008, Vol. 104 Issue 1, p013504 

    Changing the electric field applied to InAs quantum dots embedded in a p-i-n diode was found to modulate the radiative recombination rate of excitons in the dots. The quantum dots were capped with a strain-reducing layer to realize 1.3 μm photoemission and a large dipole moment to the exciton...

  • Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. Jiang, J.; Mi, K.; Tsao, S.; Zhang, W.; Lim, H.; O'Sullivan, T.; Sills, T.; Razeghi, M.; Brown, G.J.; Tidrow, M.Z. // Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2232 

    We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics